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| NTD4815NH Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb-Free Devices http://onsemi.com V(BR)DSS 30 V 27.7 mW @ 4.5 V D RDS(ON) MAX 15 mW @ 10 V 35 A ID MAX Applications * CPU Power Delivery * DC-DC Converters * High Side Switching MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current RqJA (Note 1) Power Dissipation RqJA (Note 1) Continuous Drain Current RqJA (Note 2) Power Dissipation RqJA (Note 2) Continuous Drain Current RqJC (Note 1) Power Dissipation RqJC (Note 1) Pulsed Drain Current tp=10ms TA = 25C TA = 85C TA = 25C TA = 25C Steady State TA = 85C TA = 25C TC = 25C TC = 85C TC = 25C TA = 25C TA = 25C PD IDM IDmaxPkg TJ, TSTG IS dV/dt EAS PD ID PD ID Symbol VDSS VGS ID Value 30 20 8.5 6.5 1.92 6.9 5.3 1.26 35 27 32.6 87 35 -55 to +175 27 6 35.6 W A A C A V/ns mJ 4 Drain YWW 48 15NHG W A W 12 A 3 DPAK CASE 369C (Bent Lead) STYLE 2 Unit V V A G S N-CHANNEL MOSFET 4 4 4 1 2 3 3 IPAK IPAK CASE 369AC CASE 369D (Straight Lead) (Straight Lead DPAK) 23 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain YWW 48 15NHG 4 Drain YWW 48 15NHG Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) Drain to Source dV/dt Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 15.4 Apk, L = 0.3 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 2 1 23 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source Y = Year WW = Work Week 4815NH= Device Code G = Pb-Free Package TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 December, 2006 - Rev. 0 Publication Order Number: NTD4815NH/D NTD4815NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction-to-Case (Drain) Junction-to-TAB (Drain) Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - Steady State (Note 2) 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. Symbol RqJC RqJC-TAB RqJA RqJA Value 4.6 3.5 78 119 Unit C/W ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V, VDS = 24 V TJ = 25 C TJ = 125C VGS = 0 V, ID = 250 mA 30 25 1 10 100 V mV/C mA nA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 1.5 5.6 2.5 V mV/C VGS = 10 V to 11.5 V VGS = 4.5 V ID = 30 A ID = 15 A ID = 30 A ID = 15 A 12 11.5 23.5 20.1 6.0 15 mW 27.7 Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gFS VDS = 15 V, ID = 10 A S CISS COSS CRSS QG(TOT) QG(TH) QGS QGD QG(TOT) VGS = 11.5 V, VDS = 15 V; ID = 30 A VGS = 4.5 V, VDS = 15 V; ID = 30 A VGS = 0 V, f = 1.0 MHz, VDS = 12 V 845 183 103 6.4 1.5 2.9 2.7 15.2 nC nC 6.8 pF td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 11.3 17.6 11 2.8 ns 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD4815NH ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 30 A TJ = 25C TJ = 125C 0.98 0.92 18.1 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 11.3 6.8 8.2 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W 14.7 17.8 1.8 6.7 17.6 18.4 2.3 ns Symbol Test Condition Min Typ Max Unit Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance tRR ta tb QRR LS LD LD LG RG TA = 25C 2.49 0.0164 1.88 3.46 0.6 nH W 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTD4815NH TYPICAL PERFORMANCE CURVES 80 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 70 60 50 40 30 20 10 0 0 2 4 6 8 5V 4.5 V 4.2 V 4V 3.8 V 3.5 V 3.2 V 10 10 V 8V 6V TJ = 25C 50 40 30 20 10 0 0 1 2 3 60 VDS 10 V TJ = 125C TJ = 25C TJ = -55C 4 5 6 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.04 ID = 30 A TJ = 25C 0.03 0.05 TJ = 25C 0.04 VGS = 4.5 V 0.03 0.02 0.02 0.01 0.01 VGS = 11.5 V 0 2 3 4 5 6 7 8 9 10 11 12 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 100 0 25 50 75 100 125 150 175 0 ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 100C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Drain Voltage http://onsemi.com 4 NTD4815NH TYPICAL PERFORMANCE CURVES VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 0 Crss 5 10 15 20 25 30 DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 15 25 VGS = 0 V Ciss TJ = 25C 12 VDS QT VGS 20 9 15 6 Q1 Q2 ID = 30 A TJ = 25C 10 Coss 3 0 0 5 0 20 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) 18 Figure 7. Capacitance Variation Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge 35 IS, SOURCE CURRENT (AMPS) 100 VDD = 15 V ID = 30 A VGS = 11.5 V td(off) t, TIME (ns) tr 10 td(on) tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 VGS = 0 V 30 25 20 15 10 5 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 25C VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 I D, DRAIN CURRENT (AMPS) 40 Figure 10. Diode Forward Voltage vs. Current ID = 15.4 A 35 30 25 20 15 10 5 0 25 50 75 150 100 125 TJ, JUNCTION TEMPERATURE (C) 175 100 10 ms 10 VGS = 20 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 100 ms 1 ms 10 ms dc 1 0.1 1 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 NTD4815NH TYPICAL PERFORMANCE CURVES 100 I D, DRAIN CURRENT (AMPS) 100C 10 125C 25C 1 0.1 1 10 100 PULSE WIDTH (ms) 1000 Figure 13. Avalanche Characteristics r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) P(pk) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E-04 1.0E-01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Device NTD4815NHT4G NTD4815NH-1G NTD4815NH-35G Package DPAK (Pb-Free) IPAK (Pb-Free) IPAK Trimmed Lead (3.5 " 0.15 mm) (Pb-Free) Shipping 2500 / Tape & Reel 75 Units / Rail 75 Units / Rail For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4815NH PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE O -T- B V R 4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD4815NH PACKAGE DIMENSIONS 3 IPAK, STRAIGHT LEAD CASE 369AC-01 ISSUE O NOTES: 1.. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.. CONTROLLING DIMENSION: INCH. 3. SEATING PLANE IS ON TOP OF DAMBAR POSITION. 4. DIMENSION A DOES NOT INCLUDE DAMBAR POSITION OR MOLD GATE. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.043 0.090 BSC 0.034 0.040 0.018 0.023 0.134 0.142 0.180 0.215 0.035 0.050 0.000 0.010 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.09 2.29 BSC 0.87 1.01 0.46 0.58 3.40 3.60 4.57 5.46 0.89 1.27 0.000 0.25 B V R C E A SEATING PLANE W F G K J H D 3 PL 0.13 (0.005) W DIM A B C D E F G H J K R V W IPAK (STRAIGHT LEAD DPAK) CASE 369D-01 ISSUE B B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 8 NTD4815NH/D |
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